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Polymorphous Silicon: A Promising Material for Thin-Film Transistors for Low-Cost and High-Performance Active-Matrix OLED Displays

Francois TEMPLIER
Julien BROCHET
Bernard AVENTURIER
David COOPER
Alexey ABRAMOV
Dmitri DAINEKA
Pere ROCA i CABARROCAS

Publication
IEICE TRANSACTIONS on Electronics   Vol.E93-C    No.10    pp.1490-1494
Publication Date: 2010/10/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.1490
Print ISSN: 0916-8516
Type of Manuscript: Special Section INVITED PAPER (Special Section on Frontier of Thin-Film Transistor Technology)
Category: 
Keyword: 
thin-film transistors,  polymorphous,  silicon,  OLED,  

Full Text: FreePDF(1.4MB)
Summary: 
Hydrogenated polymorphous Silicon allows to fabricate TFTs with very interesting characteristics including better threshold voltage stability than a-Si TFTs, lower leakage current than µc-Si:H TFTs and excellent uniformity. Investigation of threshold voltage shift mechanisms of pm-Si:H TFTs has shown a specific semiconductor material degradation with different activation energies compared to a-Si:H TFTs. TEM analysis has evidenced for the first time a significant structural difference between pm-Si:H and a-Si:H materials, in the TFT device configuration. Pm-Si:H appears to be very suitable for low cost and high performance AM-OLED fabrication.